Course info

This module provides an introduction to the structural, electronic and optical properties of modern semiconductor materials and their associated nanostructures. The scientific and economic importance of semiconductor physics as a cross-cutting part of modern solid-state physics is briefly outlined. Then, an introduction to the different methods for the fabrication and deposition used for ultrapure semiconductor materials, alloys and mixed crystals as well as heterostructure will be given. The main body of the module deals with the material, electronic, vibrational and optical properties of the most commonly used semiconductors. This includes elemental semiconductors such as silicon, germanium and diamond, as well as compound semiconductors like group-III arsenides, antimonides and nitrides used for optoelectronic devices. We will understand the detailed origins of the electronic bandstructure, and discuss the resulting properties of effective mass electrons, holes and other relevant quasiparticles such as excitons and polarons. Equilibrium charge carrier statistics in intrinsic (undoped) semiconductors are then explored before discussing how doping can be used to controllably modify the electronic properties. We will then explore methods to obtain high carrier mobility in semiconductors, from which we will explore semi-classical and quantum transport of charge carriers in nanostructure materials. This is followed by a discussion of the electronic properties of semiconductors under application-related non-equilibrium conditions, such as illumination in solar cells or photo-detectors, or voltage biasing in diodes or transistors. To this end, the basic properties of semiconductor/semiconductor-, semiconductor/metal-, and semiconductor/insulator-hetero-interfaces will be discussed, providing a sound basis for exploring quantum electronic and photonic devices in other modules.